| PART |
Description |
Maker |
| ZXTR2012Z ZXTR2012Z-7 |
100V INPUT, 12V 30mA REGULATOR TRANSISTOR
|
Diodes Incorporated
|
| 2SC5064O |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SC-59 晶体管|晶体管|叩| 12V的五（巴西）总裁| 30mA的一（c）|律师- 59
|
NEC, Corp.
|
| PHT4N10T |
12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
Microsemi, Corp.
|
| DTA125TA DTA143XLA DTA143XAA DTA144GFA DTB114GF DT |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|资深大律师，71VAR
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 100mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 50mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Air Cost Control
Delta Electronics, Inc.
Yageo, Corp.
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Intel, Corp.
Diodes, Inc.
|
| M54577P M54577FP |
7 UNIT 30MA TRANSISTOR ARRAY
7-UNIT 30mA TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ZXTR2005Z |
100V INPUT, 5V 30mA REGULATOR TRANSISTOR
|
Diodes Incorporated
|
| 2SK241 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,30MA I(D),MICRO-X
From old datasheet system
|
Toshiba.
|
| DUI230S DU1230S |
RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz
RF MOSFET Power Transistor锛?30 W锛?12V锛?2 -175 MHz
RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz 射频MOSFET功率晶体管，3OW2V - 175兆赫
RF MOSFET Power Transistor30 W12V2 -175 MHz 射频MOSFET功率晶体管，30瓦，12V的，2 -175兆赫
RF MOSFET Power Transistor/ 3OW/ 12V 2 - 175 MHz
|
Hubbell Wiring Device-Kellems
TE Connectivity, Ltd.
Tyco Electronics
|
| BF509S |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 30MA I(C) | TO-92 晶体管|晶体管|进步党| 35V的五（巴西）总裁| 30mA的一（c）|92
|
Amphenol, Corp.
|
| FCX688B FCX688BTA |
TRANSISTOR NPN 12V 3000MA SOT-89 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON POWER (SWITCHING) TRANSISTOR
|
Zetex Semiconductor PLC
Zetex Semiconductors
|
| 2SC2229Y BF594 2SC1815GR 2SC1815O BF596 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 50mA的一c）|2
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五（巴西）总裁| 25mA电流一（c）|2
|
Lumex, Inc.
Atmel, Corp.
|
| RM500DZ-M RM500DZ-H RM500UZ-M RM500DZ-24 RM500DZ-2 |
Rectifier Diodes, 800V
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型
BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
