| PART |
Description |
Maker |
| TC58NYG0S3HBAI4 |
SLC NAND
|
TOSHIBA
|
| TH58NVG3S0HTAI0 |
SLC NAND
|
TOSHIBA
|
| TC58NVG1S3HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG3S0FBAID |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0FBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NYG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| ST6294M8 |
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
|
|
| 25M02GVTBIG 25M02GVTBIT 25M02GVTCIG 25M02GVTCIT 25 |
3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS
|
Winbond
|
| K5N1229ACD-BQ12 |
512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
|
Samsung semiconductor
|
| DM54H20J DM54H20J_883 DM54H20J_883B DM54H20J_883C |
Single 8-input NAND Gate 8输入与非
Dual 4-input NAND Gate 4输入与非
CERAMIC CHIP/MIL-PRF-55681 陶瓷芯片/mil-prf-55681
Quad 2-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate
Dual4-inputNANDGate
|
Cypress Semiconductor, Corp.
Rochester Electronics, LLC
TE Connectivity, Ltd.
|
