| PART |
Description |
Maker |
| TH58NVG3S0HTAI0 |
SLC NAND
|
TOSHIBA
|
| TC58NVG1S3HTA00 |
SLC NAND
|
TOSHIBA
|
| TH58NVG3S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NYG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive
NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
| S34MS01G1 S34MS02G1 S34MS04G1 |
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| S34MS01G2 S34MS02G2 S34MS04G2 |
1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| K5N1229ACD-BQ12 |
512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
|
Samsung semiconductor
|
| M38510/30009B2A M38510/30009BAA M38510/30009BAB M3 |
Single 8-input NAND Gate
Dual 4-input NAND Gate
Quad 2-input NAND Gate
Triple 3-input NAND Gate 3输入与非
Triple 3-input NAND Gate 输入与非
|
ITT, Corp.
Linear Technology, Corp.
Bel Fuse, Inc.
|
| MMC4011 MMC4012 MMC4023 |
Dual 4-input NAND gate
Quad 2-input NAND gate
(MMC4012) NAND GATES
|
Microelectronica
Micro Electronics
|
