| PART |
Description |
Maker |
| IPT1608-SEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0408-05B |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT1208-SEF IPT1208-TEF IPT1208-CEF IPT1208-BEF |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| 2N3030 JAN2N3030 JANTX2N3030 2N3027 2N3031 JAN2N30 |
Tubular Radial Lead Capacitor Solder Mount
SCRs 0.5 Amp/ Planear
SCRs 0.5 Amp, Planear
SCRs 0.5 Amp Planear
|
MICROSEMI[Microsemi Corporation]
|
| IPT12Q06-CEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| JAN2N2328S JANTX2N2328S JANTXV2N2328S 2N2324 JAN2N |
SCRs 1.6 Amp, Planear 1.6 A, 100 V, SCR, TO-205AD
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
Thyristor Switches
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
SCRs 1.6 Amp / Planear
SCRs 1.6 Amp/ Planear
SCRs 1.6 Amp Planear
SILICON CONTROLLED RECTIFIER
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| TLE8262E |
Universal System Basis Chip HERMES Rev. 1.0
|
Infineon Technologies AG
|
| SOC-3000-0001-SP |
Scale-On-Chip ASIC Technical Specification Rev.B1
|
ETC
|
| TLE8261E |
Universal System Basis Chip HERMES Rev. 1.0
|
Infineon Technologies AG
|
| MC145576EVKAD |
Addendum to MC145576EVK/D Rev. 1.1 ISDN Single-Chip NT1 Transceiver Evaluation Kit
|
Motorola
|
| MPC860UM MPC860UMAD |
Errata to the MPC860 PowerQUICC Family User’s Manual, Rev. 2
Errata to the MPC860 PowerQUICC⑩ Family User’s Manual, Rev. 2
Errata to the MPC860 PowerQUICC Family Users Manual Rev. 2
Errata to the MPC860 PowerQUICC Family Users Manual, Rev. 2
Errata to the MPC860 PowerQUICCFamily UserManual, Rev. 2
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
