| PART |
Description |
Maker |
| CMPA5585025F CMPA5585025F-AMP CMPA5585025F-TB |
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA801B025F-AMP CMPA801B025F-TB CMPA801B025P |
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| HMC512LP5 HMC512LP5E |
MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz
|
Hittite Microwave Corporation
|
| TAT8888-1200 TAT9988 TAT9988-15 |
CATV GaN Power Doubler MMIC
|
TriQuint Semiconductor
|
| QPL1002 QPL1002EVB |
0.03 ?3 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2612-SM-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| HMMC-3004 |
DC-16 GHz GaAs HBT MMIC Divide-by-4 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路定标
DC-16 GHz GaAs HBT MMIC Divide-by-4 Prescaler(DC-16 GHz 砷化镓HBT单片微波集成电路4定标
|
Agilent(Hewlett-Packard)
|
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
