PART |
Description |
Maker |
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor
|
NXP Semiconductors N.V.
|
MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
BLF8G20LS-140GV |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF6G20LS-110 BLF6G20-110 |
Power LDMOS transistor
|
NXP Semiconductors
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLP05H6110XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|