PART |
Description |
Maker |
HN2E01F07 HN2E01F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation Toshiba Semiconductor
|
HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation Toshiba Semiconductor
|
HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
CYM1841APR-20C CYM1841BPZ-25C CYM1841APY-20C CYM18 |
x32 SRAM Module X32号的SRAM模块 256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PSMA72 PLASTIC, SIMM-72 256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PSMA72 PLASTIC, SIMM-72 256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72 PLASTIC, SIMM-72 256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA72 PLASTIC, SIMM-72 256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA64 PLASTIC, SIMM-64 256K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PSMA64 PLASTIC, SIMM-64 256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZMA64 PLASTIC, ZIP-64
|
Cypress Semiconductor, Corp. Everlight Electronics Co., Ltd. Pyramid Semiconductor, Corp. YEONHO Electronics Co., Ltd.
|
AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66 512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components Austin Semiconductor
|
TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|
ISD1100P ISD1100X ISD1112 ISD1110 ISD1120 ISD1110P |
Single-Chip Voice Record/Playback Device(Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时12秒)) 单芯片语音记播放设备(单芯片的持续时12秒)(单片的录音/录音重放器(一片信息存储持续时12秒) Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations(单片声音录音/回放芯片(单片信息存储持续时间12秒钟)) Single-Chip Voice Record/Playback Device(Single-chip Durations of 10 seconds)(单片的录录音重放一片信息存储持续时0秒)) Single-Chip Voice Record/Playback Device(Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时2秒)) SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES RES POWER .360 OHM 1W 5% SMT
|
List of Unclassifed Manufacturers Winbond Electronics, Corp. Winbond Electronics Corp ETC Electronic Theatre Controls, Inc.
|
TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻,高功率-卓越的长期稳 Resistors, fixed discrete
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
PUMA68SV32000BM-020 PUMA68SV32000BI-015 |
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PQCC68 25.27 X 25.27 MM, 5.08 MM HEIGHT, PLASTIC, LCC-68 1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PQCC68
|
ST Microelectronics
|
CYM1836V33P8-35C CYM1836V33P8-45C CYM1836V33PM-30C |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, PSMA72 512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, PSMA72 512K X 8 MULTI DEVICE SRAM MODULE, 30 ns, SMA64
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|