| PART |
Description |
Maker |
| BGA915N7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFP740F BFP740F-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| BGU7003 |
Wideband silicon germanium low noise amplifier MMIC
|
NXP SEMICONDUCTORS
|
| SGL0363ZPCK2 SGL0363ZPCK4 SGL0363ZSR SGL0363ZPCK1 |
5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| SGL-0263 |
1900-2400 MHz low noise amplifier 50 Ohm, silicon germanium
|
Stanford Microdevices
|
| BGA622 |
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
|
Infineon Technologies AG
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP640ESD-12 |
Robust Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
