PART |
Description |
Maker |
MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
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Micron Technology
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2CL73T |
High Voltage Fast Recovery Rectifier 12 kV Vol ts
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Micro Commercial Compon...
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MFK2807D/883 MFK2805S/883 MFK2805D/883 MFK2812D/88 |
MFK S ingle and D ual D C-DC Converters 16 to 50 vol ts i npu t ?25 Watt
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Interpoint Corporation ...
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KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM 1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
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Winbond Electronics Corp http:// Winbond Electronics, Corp.
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K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic Samsung semiconductor
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KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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MAX1027-MAX1031 MAX1029AEEP-T MAX1027AEEE-T MAX102 |
10-Bit 300ksps ADCs with FIFO, Temp Sensor, Internal Reference -10-Bit 300ksps ADCs with FIFO,Temp Sensor, Internal Reference 10-Bit 300ksps ADCs with FIFO. Temp Sensor. Internal Reference 10位300ksps ADC,带有FIFO、温度传感器及内置基 10-Bit 300ksps ADCs with FIFO,Temp Sensor, Internal Reference 1000ksps速率ADC的带有FIFO,温度传感器,内部参 10-Bit 300ksps ADCs with FIFO,Temp Sensor, Internal Reference 8-CH 10-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO16
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MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc.
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HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
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Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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