PART |
Description |
Maker |
WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
GN01032N |
Gallium Arsenide Devices
|
Panasonic
|
3SK0273 |
Gallium Arsenide Devices
|
Panasonic
|
GN01061B |
Gallium Arsenide Devices
|
Panasonic
|
OH10015 |
Gallium Arsenide Devices
|
Panasonic
|
L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier 4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier 220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|