| PART |
Description |
Maker |
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated
60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IRFF9220 2N6847 JANTX2N6847 JANTXV2N6847 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
|
| SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated
SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| RF1K49086 |
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, AVALANCHE RATED, DUAL N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SFF23N60S1 SFF23N60S2 FT0029B FT0029B-15 |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| IXTQ52P10P |
P-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTC160N10T |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTA160N10T7 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTP2N100P IXTY2N100P IXTA2N100P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
