| PART |
Description |
Maker |
| WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP |
512K x 8 SRAM, 15ns
512K x 8 SRAM, 17ns
512K x 8 SRAM, 20ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| AS7C4096A-12TCN AS7C4096A-15JI |
IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Alliance Memory, Inc.
ALLIANCE MEMORY INC
|
| EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL3 |
25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM，贴962-89598
128Kx8 Monolithic SRAM/ SMD 5962-89598
15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
ETC
Electronic Theatre Controls, Inc.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A |
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 2.5V的为512k × 32/36管线爆裂同步SRAM
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.5 ns, PQFP100
Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor Corp...
|
| IS61NLF25636A-7.5B2I-TR IS61NLF51218A-7.5B3I-TR IS |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| CY7C1365V25 |
512K x 18 Flowthrough SRAM(512K x 18 流通式 SRAM) 直通为512k × 18的SRAM（为512k × 18流通式的SRAM
|
Cypress Semiconductor Corp.
|
| AS8S512K32AP-45/IT AS8S512K32Q-45LIT AS8S512K32P-4 |
512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PGA66
512K x 32 SRAM memory array
|
AUSTIN SEMICONDUCTOR INC
|
| 5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM. 15ns access time. Lead finish hot gold.
512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped.
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow.
512K x 18 SRAM. 15ns access time. Lead finish factory option.
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
