| PART |
Description |
Maker |
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| K6F1008V2C K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM 128Kx8位超低功耗和低电压的CMOS静态RAM
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 71024S20TYI 71024S15TYI IDT71024S15TYI8 IDT71024S2 |
128K X 8 STANDARD SRAM, 20 ns, PDSO32 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PDSO32 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PDSO32 0.300 INCH, PLASTIC, SOJ-32
128K X 8 STANDARD SRAM, 20 ns, PDSO32 0.300 INCH, PLASTIC, SOJ-32
IC, 128KX8 SRAM 20NS 128K X 8 STANDARD SRAM, 20 ns, PDSO32
SMD-IC,MEM,SRAM,128KX8 25NS,.3W SOJ32 128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| 28C010ERPGP-15 28C010ERPGP-12 28C010ERPGI-15 28C01 |
±15kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers
Low-RON, Dual-SPST/Single-SPDT Clickless Switches with Negative Rail Capability
Single/Dual/Quad, Micropower, Single-Supply, Rail-to-Rail Op Amps
High-/Full-Speed USB 2.0 Switches x8的EEPROM
128Kx8 EEPROM 128Kx8 EEPROM
Hex SPDT Data Switch x8的EEPROM
|
Infineon Technologies AG
Vishay Intertechnology, Inc.
TE Connectivity, Ltd.
ITT, Corp.
Jameco Electronics
|
| KM681000ELT-7L KM681000ELG-5 KM681000ELG-7 KM68100 |
128Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| EDI88128CDXCC EDI88128CDXCM EDI88128CDXFC EDI88128 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| HY62U8100B |
IC,SRAM,128KX8,CMOS,SOP,32PIN,PLASTIC
|
Hynix
|
| EDI88130CSXNB EDI88130CSXCB EDI88130CSXTM EDI88130 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
http://
White Electronic Design...
|
| EM128L08 EM128L08T EM128L08N |
128KX8 BIT ULTRA-LOW POWER ASYNCHRONOUS STATIC RAM
|
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
|
| IDT71024S12P |
SRAM,128KX8,CMOS,DIP,32PIN,PLASTIC
From old datasheet system
|
Integrated Device Technology Inc
|
