| PART |
Description |
Maker |
| PSMN8R5-100XS |
N-channel 100V 8.5 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN5R6-100XS |
N-channel 100V 5.6 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN016-100XS |
N-channel 100V 16 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN4R5-40PS |
N-channel 40 V 4.6 mstandard level MOSFET
|
NXP Semiconductors
|
| PSMN2R6-40YS |
N-channel LFPAK 40 V 2.8 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7M8R5-40H |
N-channel 40 V, 8.5 mstandard level MOSFET in LFPAK33
|
Nexperia
|
| BUK7K12-60E |
Dual N-channel 60 V, 9.3 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7K5R1-30E |
Dual N-channel 30 V, 5.1 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7K6R8-40E |
Dual N-channel 40 V, 6.8 mstandard level MOSFET
|
NXP Semiconductors
|
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
