| PART |
Description |
Maker |
| TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662 |
NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314 |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications
|
SANYO
|
| 2SC3513 |
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
|
TY Semiconductor Co., Ltd
|
| CJF122 |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 2000 hFE.
|
Continental Device India Limited
|
| CSD667C |
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE
|
Continental Device India Limited
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| HPL1117V HPL1117U HPL1117G HPL1117F HPL1117 HPL111 |
1A Low Dropout Fast Response Positive Adjustable Regulator and Fixed 1.8V, 2.5V, 2.85V, 3.3V and 5V 1A低压差快速反应积极可调稳压器和固定在1.8V2.5V，工作在2.85V.3VV
RES CERAMIC COMP 820 OHM 2W
|
Electronic Theatre Controls, Inc.
ETC
ETC[ETC]
|
| CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
