| PART |
Description |
Maker |
| IRKLF132 2213 IRKHF152-04HL IRKLF132-08HL IRKLF152 |
INT-A-pak Power Modules(可控二极H结构INT-A-pak功率模块) 相依甲柏功率模块（可控硅/二极结构相依甲柏功率模块
INT-A-pak Power Modules(可控可控L结构INT-A-pak功率模块)
INT-A-pak Power Modules(可控二极管H结构INT-A-pak功率模块)
From old datasheet system
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
|
International Rectifier, Corp.
|
| VBO45-12NO7 VBO45-18NO7 VBO45-08NO7 VBO45-14NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBO21-12NO7 VBO21-08NO7 VBO21-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS Corporation
|
| VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| MDD312-12N1 L102 MDD312-18N1 MDD312-14N1 MDD312-16 |
Thyristor and Rectifiers Modules
High Power Diode Modules
CAT6A PLENUM, GREEN, SPOOBULK CABLE
|
IXYS Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MID150-12A4 MII150-12A4 IXYSCORP-MID150-12A4 |
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
| IRK430 |
SUPER MAGN-A-PAK?/a> Power Modules
SUPER MAGN-A-PAK⑩ Power Modules
SUPER MAGN-A-PAK Power Modules
|
International Rectifier
|
