PART |
Description |
Maker |
7MBR30NE060 |
IGBT module IGBT(600V/30A/PIM)
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric]
|
RJH60T04DPQA1 |
600V - 30A - IGBT
|
Renesas Electronics Corporation
|
FGH30N60LSD |
600V, 30A, PT IGBT
|
Fairchild Semiconductor
|
SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes Fast IGBT in NPT-technology IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier 600V 30A HyperFast Discrete Diode in a TO-220AC package 600V 30A HyperFast Discrete Diode in a TO-262 package 600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
ISL9K3060G ISL9K3060G3 ISL9K3060G3NL |
30A, 600V Stealth?/a> Dual Diode 30A, 600V Stealth Dual Diode 30A, 600V Stealth??Dual Diode 30A 600V Stealth Dual Diode 30A, 600V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K |
600V UltraFast 10-30 kHz IGBT in a TO-262 package 600V UltraFast 10-30 kHz IGBT in a D2-Pak package 600V UltraFast 10-30 kHz IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|