| PART |
Description |
Maker |
| TC58BYG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L6423F M381L3223FTM M381L3223FTM-CLB3A2 M381L6 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC
|
SANKEN[Sanken electric]
|
| M381L6423ETM-LC5 M368L3223ETM-CC5 M368L3223ETM-LC5 |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NA570L-R8GI-H81-US |
Supports 32 GB DDR3-1600 non-ECC/ECC memory
|
Axiomtek Co., Ltd.
|
| KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| DTA143ZE DTA143ZKA DTA143ZSA DTA143ZUA A5800431 |
Digital Transistor(Built in Resistor)
From old datasheet system
Digital transistors (built-in resistors)
|
Rohm CO.,LTD.
|
