| PART |
Description |
Maker |
| OP955 |
PIN Sili con Pho todiode
|
Optek Technology
ETC
OPTEK[OPTEK Technologies]
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| OPF792 |
Short Wave length PIN Pho todiode FIBER OPTIC PHOTODIODE DETECTOR, PANEL MOUNT, ST CONNECTOR
|
TT electronics OPTEK Technology
OPTEK[OPTEK Technologies]
|
| BDS12 BDS12SMD BDS10SMD BDS11SMD BDS11 BDS10 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BUL53B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 12 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
|
| BD705 BD710 BD711 BD707 BD708 BD709 BD706 |
silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| BDS10SMD BDS10SMD05 BDS12 BDS12SMD BDS11SMD05 BDS1 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| MJ10005 MJ10004 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
Boca Semiconductor Corporation
Boca Semiconductor Corporat...
|
