PART |
Description |
Maker |
PTMC210124MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
PTMC210404MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
CGY181 |
PCN/PCS 2 stage Power Amplifier MMIC
|
Infineon
|
Q68000-A8370 CGY50 CGY50E6327 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 Ω gain block) From old datasheet system GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 ヘ gain block) GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block) GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block) GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block) Broadband MMIC Amplifier
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon
|
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
Q68000-A4444 CGY40 |
From old datasheet system GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|