| PART |
Description |
Maker |
| BLM7G24S-30BG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-40PB BLM7G1822S-40PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| CGY93 |
GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| MW5IC970GNBR1 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
Freescale Semiconductor...
|
| MW5IC970GNBR1 MW5IC970NBR1 MW5IC970NBR108 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
Freescale Semiconductor, Inc
|
| MW5IC970NBR1 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
FREESCALE[Freescale Semiconductor, Inc]
|
| CGY21 Q68000-A5953 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
