| PART |
Description |
Maker |
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| SGL-0363Z |
5-2000 MHz Low Noise Amplifier Silicon Germanium
|
SIRENZA[SIRENZA MICRODEVICES]
|
| SGL0263Z SGL0263ZSQ SGL0263ZSR |
1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER
|
RF Micro Devices
|
| SGL0622Z |
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| BGA619 |
The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications
|
Infineon Technologies AG
|
| BGA622 |
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
|
Infineon Technologies AG
|
| BFP640ESD-12 |
Robust Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 2SC4957 2SC4957-T1 2SC4957-T2 2SC4957NE68539E 2SC4 |
Microwave low-noise amplification silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 高频低噪声放大器NPN硅外延晶体管4个引脚微型模
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC, Corp.
NEC Corp.
|
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
