| PART |
Description |
Maker |
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAT15-03W Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| INA-54063-BLK |
3.0 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| AT-41535 AT-41535G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
| INA-50311 INA-50311-BLK INA-50311-TR1 |
1 GHz的硅单片低噪声放大器
1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
http://
|
| BAT15-099 BAT1599 Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier
Low Noise Amplifier 1.5 - 1.6 GHz
GT 35C 7#12,28#16 SKT RECP
|
MA-Com
MACOM[Tyco Electronics]
|
| INA-30311 INA-30311-TR1 |
1 GHz Low Noise Silicon MMIC Amplifier
1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
| UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
