| PART |
Description |
Maker |
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| Q62702-F655 BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier
Low Noise Amplifier 1.5 - 1.6 GHz
GT 35C 7#12,28#16 SKT RECP
|
MA-Com
MACOM[Tyco Electronics]
|
| BAT15-098 Q62702-A0062 BAT15_98 |
From old datasheet system
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) 硅肖特基二极管（星展混合器的应用10 GHz低噪声系数低屏障型）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| UPC1676G-T1 |
1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER 1.2千兆赫带宽，低噪声硅MMIC放大
|
NEC, Corp.
|
| INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier
GT 14C 14#16 SKT PLUG
1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| INA-30311 INA-30311-TR1 |
1 GHz Low Noise Silicon MMIC Amplifier
1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AA035N1-00 AA035N2-00 |
286 GHz GaAs MMIC Low Noise Amplifier
28-36 GHz GaAs MMIC Low Noise Amplifier
GT 12C 6#12 6#12 PIN PLUG
|
http://
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
