PART |
Description |
Maker |
STW9C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
STW9B12C |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
PTFB090901FA PTFB090901EA |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
|
Infineon Technologies AG
|