| PART |
Description |
Maker |
| ADP3330ARTZ-2.5-R7 ADP3330ARTZ-3.6-R7 ADP3330ARTZ- |
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6
3.6 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ROHS COMPLIANT, ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
2.75 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
3 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFA080551E PTFA080551F |
Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 鈥?960 MHz
|
Infineon Technologies AG
|
| PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
| PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG
Infineon Technologies A...
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
|
