| PART |
Description |
Maker |
| ACS709LLFTR-20BB-T ACS709LLFTR-35BB-T ACS709 |
High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package
|
Allegro MicroSystems
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTVA123501EFC-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTVA047002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PPC440EP-3UC667C PPC440EP-3TC667C PPC440EP-3UC667C |
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, ROHS COMPLIANT, THERMALLY ENHANCED, PLASTIC, BGA-456
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, THERMALLY ENHANCED, PLASTIC, BGA-456
|
Applied Micro Circuits, Corp.
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA080551E PTFA080551F |
Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 鈥?960 MHz
|
Infineon Technologies AG
|
| PTFA181001GL PTFA181001HL |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
