| PART |
Description |
Maker |
| NDT451AN NDT451 NDT451ANJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223
N-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| NDT410EL NDT410ELJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| AH18010 AH180-PG-A-S AH180-FJG-7 AH180-SNG-7 AH180 |
MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR SWITCH
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.30V, SQUARE, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.30V, RECTANGULAR, SURFACE MOUNT GREEN, SC-59, SOT-23, 3 PIN
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| HAL320SF-E |
IC HALL EFFECT SENSOR SOT-89B MAGNETIC FIELD SENSOR-HALL EFFECT, -2.5-2.5mT, 0.17-0.25V, RECTANGULAR, SURFACE MOUNT
|
Micronas Semiconductor Holding AG
|
| SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| 2SK3387 |
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型（二π- MOSV
From old datasheet system
|
PMC-Sierra, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
| SSM3K12T |
Field Effect Transistor Silicon N Channel MOS Type/Category DC-DC Converter High Speed Switching Applications
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
|
TOSHIBA[Toshiba Semiconductor]
|
