PART |
Description |
Maker |
604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
|
Rochester Electronics, LLC
|
Q6040M9 Q7040M9 Q4040M9 Q2040M9 Q8040M9 Q5040M9 Q2 |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|800V V(DRM)|40A I(T)RMS|TO-218 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五(DRM)的| 15A条口(T)的有效值|20 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|800V V(DRM)|25A I(T)RMS|TO-220
|
Motorola Mobility Holdings, Inc.
|
SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
|
IPT240 I3PT430 ISPT640 IPT130 |
TRIAC|200V V(DRM)|40A I(T)RMS|PRESS-19 TRIAC|400V V(DRM)|30A I(T)RMS|FBASE-R-HW30 可控硅| 400V五(DRM)的| 30A条口(T)的有效值| FBASE受体- HW30 TRIAC|600V V(DRM)|40A I(T)RMS|IST-3RT-1/4 可控硅| 600V的五(DRM)的| 40A条口(T)的有效值|北京时间- 3RT - 1 / 4 TRIAC|100V V(DRM)|30A I(T)RMS|PRESS-19
|
Electronic Theatre Controls, Inc.
|
BCR20E8L BCR16A10R BCR16A10L BCR16E10R BCR20B10R B |
TRIAC|400V V(DRM)|20A I(T)RMS|FBASE-R-HW23 TRIAC|500V V(DRM)|16A I(T)RMS|TO-208VAR TRIAC|500V V(DRM)|16A I(T)RMS|FBASE-R-HW23 TRIAC|500V V(DRM)|20A I(T)RMS|FBASE-R-HW23 TRIAC|400V V(DRM)|16A I(T)RMS|FBASE-R-HW23
|
|
Z0409MF/1AA2 Z0402MF/1AA2 Z0405MF/0AA2 Z0405MF/1AA |
TRIAC|600V V(DRM)|1A I(T)RMS|TO-202VAR IC 2.5V SDRAM 256M (16M X 16) 7.5NS BGA-60 TRIAC|700V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 700V的五(DRM)的| 1A条口(T)的有效值|02VAR IC PSRAM 16MB 48-VFBGA 可控硅| 800V的五(DRM)的| 1A条口(T)的有效值|02VAR TRIAC|800V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 800V的五(DRM)的| 1A条口(T)的有效值|02VAR
|
Cooper Bussmann, Inc. STMicroelectronics N.V.
|
BTA204S-800B BTA204S-800C BTA204S-500C BTA204S-500 |
TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 TRIAC|500V V(DRM)|4A I(T)RMS|SOT-428 可控硅| 500V五(DRM)的| 4A条口T)的有效值|采用SOT - 428
|
Microchip Technology, Inc.
|
NTE56006 |
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
|
|
CQ92MT CQ92BT |
TRIAC|200V V(DRM)|800MA I(T)RMS|TO-92 TRIAC|600V V(DRM)|800MA I(T)RMS|TO-92 可控硅| 600V的五(DRM)的| 800mA的我(T)的有效值|92
|
Orion Fans
|
BT137B500T/R |
TRIAC|500V V(DRM)|8A I(T)RMS|SOT-404 可控硅| 500V五(DRM)的| 8A条口(T)的有效值|采用SOT - 404
|
Won-Top Electronics Co., Ltd.
|
NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. Silicon Controlled Rectifier for Phase Control Applications Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|