| PART |
Description |
Maker |
| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE.
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
| 2SB1709 |
Genera purpose amplification(−12V −1.5A)
Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| 2N4901 2N4903 2N4902 |
COMPLEMENTARY SILICON POWER TRANSITORS
Leaded Power Transistor General Purpose
|
Central Semiconductor C...
|
| BDW83B BDW83A |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 2N6649 |
Leaded Power Transistor Darlington
|
Central Semiconductor
|
| 40312 2N4900 2N6260 2N6263 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N6497 2N6498 2N6499 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
| 2N6247 2N4398 |
Leaded Power Transistor General Purpose
|
Central Semiconductor
|
