| PART |
Description |
Maker |
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| W541C480 W541E |
4BIT MICROCONTROLLER, 4K ×16 ROM, 256 ×4 RAM 128 -DOT LCD
4BIT MICROCONTROLLER, 4K 】16 ROM, 256 】4 RAM 128 -DOT LCD
|
Winbond
|
| THM362020S-10 THM362020S-80 THM362020SG-10 THM3620 |
2097152 WORDS x 36BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 36BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor
EEPROM
ON Semiconductor
NXP Semiconductors N.V.
|
| MT89L80 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) 3.3 V Non-blocking Digital Switch (DX)
|
Zarlink Semiconductor
|
| MT8985 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
| ST7210101 ST72213G1B3 ST72213G1B6 ST72213G1M1 ST72 |
8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
|
STMicroelectronics
|
| ST72212G2 ST72213G1 ST72T101G2 ST72T101G1 |
8-BIT MICROCONTROLLER (MCU) WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WGD, TIMERS, SPI - SO28, SDIP32
|
STMicroelectronics
|
| ST72101 ST72101G1 ST72101G2 ST72212 ST72212G2 ST72 |
8-BIT MICROCONTROLLER (MCU) WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WGD, TIMERS, SPI - SO28, SDIP32
|
ST Microelectronics
|
|
