| PART |
Description |
Maker |
| BLA1011-300 LA1011-300 |
Avionics LDMOS transistors
Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLA6H0912-500 |
LDMOS avionics radar power transistor
|
NXP Semiconductors
|
| BLA1011-300 |
Avionics LDMOS transistors
|
PHILIPS[Philips Semiconductors]
|
| JTDA50 |
RF Power Transistors: AVIONICS
High power COMMON BASE bipolar transistor.
50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
|
Advanced Power Technology
GHz Technology
GHZTECH
ETC
List of Unclassifed Manufacturers
|
| 1011LD110B |
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
Microsemi Corporation
|
| 1090MP |
RF Power Transistors: AVIONICS
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz
|
ADPOW[Advanced Power Technology]
|
| JTDA150A |
RF Power Transistors: AVIONICS
145 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
|
Advanced Power Technology
GHz Technology
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
