| PART |
Description |
Maker |
| W942508CH-75 |
8M x 4 BANKS x 8 BIT DDR SDRAM 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Winbond Electronics, Corp.
|
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| ICSSSTV16859 ICSSSTV16859YK |
DDR 13-Bit to 26-Bit Registered Buffer
|
ICST[Integrated Circuit Systems]
|
| IDT72T2098L7BBI IDT72T20118L7BB IDT72T20108L7BBI I |
2.5 VOLT HIGH-SPEED TeraSync DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION
2.5 VOLT HIGH-SPEED TeraSync?/a> DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION
|
Integrated Device Technology
|
| UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 |
128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM
128M-bit(2M-word x 16-bit x 4-bank)DDR SDRAM
128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAM
|
NEC
|
| ICS83841BHT ICS83841 ICS83841BH ICS83841BHLF ICS83 |
20 BIT, DDR SDRAM 2:1 MUX
|
Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
|
| SLGSSTVF16859V-TR SLGSSTVF16859 SLGSSTVF16859H SLG |
DDR 13 to 26 Bit Registered Buffer
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| M14D5121632A-3BIG M14D5121632A1 |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
