| PART |
Description |
Maker |
| MERA-7456 |
Dual Matched MMIC Amplifiers 双匹配MMIC放大
Surface Mount Dual Matched MMIC Amplifiers 50?/a> High Dynamic Range DC to 1 GHz
Surface Mount Dual Matched MMIC Amplifiers 50з High Dynamic Range DC to 1 GHz
From old datasheet system
Surface Mount Dual Matched MMIC Amplifiers 50 High Dynamic Range DC to 1 GHz
|
Electronic Theatre Controls, Inc.
ETC[ETC]
MINI [Mini-Circuits]
MINI[Mini-Circuits]
List of Unclassifed Manufacturers
|
| STB7102 STB7102TR 102 |
0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| NE552R479A NE552R479A-T1 NE552R479A-T1-A NE552R479 |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| TA053-059-38-36 |
5.3 - 5.9 GHz 4 W Amplifiers
5.3 - 5.9 GHz 4 W Amplifiers
|
Transcom, Inc.
|
| HMC551LP4 HMC551LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.8 - 1.2 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| HMC552LP4 HMC552LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| BFQ82 |
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
Siemens Semiconductor Group
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
