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STW12N120K5 - N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package

STW12N120K5_8281148.PDF Datasheet


 Full text search : N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package
 Product Description search : N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package


 Related Part Number
PART Description Maker
STW12N120K5 STH12N120K5-2 N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package
ST Microelectronics
UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
意法半导
STMicroelectronics N.V.
STP6N120K3 STW6N120K3 STFW6N120K3 N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages
N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages
STMicroelectronics
R9110 MOSFET, Switching; VDSS (V): 150; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.097; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Hamamatsu Photonics
S5573 MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Hamamatsu Photonics
APT26F120L APT26F120B2 APT26F120B209 Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
Microsemi, Corp.
Microsemi Corporation
CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
ST Microelectronics
STD7N80K5 STU7N80K5 N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
ST Microelectronics
STF6N80K5 STFI6N80K5 N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package
ST Microelectronics
STP80N20M5 STB80N20M5 N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
ST Microelectronics
STMICROELECTRONICS
 
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