PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
CY20AAJ-8 CY20AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY25BAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT8G136 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
FGW15N40A |
Strobe Flash N-Channel Logic Level IGBT From old datasheet system
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT25G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
CY20AAJ-8F |
GTS03024-2s-025 N沟道IGBT的的频闪闪光 Nch IGBT for STROBE FLASHER Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Powerex, Inc. Powerex Power Semiconductors Cypress Semiconductor Mitsubishi Electric Corporation
|