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GN01015 - Gallium Arsenide Devices

GN01015_8282062.PDF Datasheet


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WP7113ID5V13 The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
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ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- 300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE

ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
DGSK32-018CS DGS15-018CS    Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
IXYS[IXYS Corporation]
IXYS, Corp.
KPC3023 KPC3020 KPC3021 KPC3022 (KPC3020 - KPC3023) Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) 光耦合器(这是一镓砷化物红外线发射光耦cosist
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI, CORP.
DMK3379-000-295-011 DMK3248-000-417-001 GALLIUM ARSENIDE, KU BAND, MIXER DIODE
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SKYWORKS SOLUTIONS INC
 
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