PART |
Description |
Maker |
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
ENA0412A |
Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
2N3810HRT 2N3810HRG |
Hi-Rel PNP Dual Matched Bipolar Transistor 60V - 0.05A
|
ST Microelectronics
|
DXT2012P5 DXT2012P5-13 DXT2012P5-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V 60V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
2N2906ADCSM |
TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 600MA I(C) | LLCC Dual Bipolar PNP Devices in a hermetically sealed
|
Seme LAB
|
IRFI064 IRFI064-15 |
Simple Drive Requirements TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*) TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*) 60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 1A条一c)|52AA TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
2SD880 2SD880O |
POWER TRANSISTORS(3A/60V/30W) TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB POWER TRANSISTORS(3A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
TIP2955G |
Bipolar Power T0218 PNP 15A 60V; Package: SOT-93 (T0-218) 4 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 30 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|