| PART |
Description |
Maker |
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| MJE371 ON2036 |
POWER TRANSISTOR PNP SILICON 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SA1843 2SA1843M 2SA1843L |
Silicon power transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|园区
|
NEC Corp.
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| 2SB1431 |
Silicon power transistor
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| 2SB1430 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SA1221 2SA1222 2SA1222-T 2SA1221-T 2SA1222K |
BJT
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
| ASIS15-28 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| BD135 BD139 ON0184 BD137 |
Plastic Medium Power Silicon NPN Transistor 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA
POWER TRANSISTORS NPN SILICON
CASE 77-09 TO-225AA TYPE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
