| PART |
Description |
Maker |
| HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT- |
128-MBit Synchronous DRAM 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| HYB39S64160AT HYB39S64160BT HYB39S64160BT-7 |
64M SDRAM Component
4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4× 1M× 16)同步动态RAM（用于高速图形场合）)
4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4M x 16)同步动态RAM（用于高速图形场合）)
|
Infineon
SIEMENS AG
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| IS42S16160-7BL IS42S16160-6BLI |
256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| HYB39S512400AE-7.5 HYB39S512800AE-7.5 HYB39S512160 |
512-Mbit Synchronous DRAM
|
Qimonda AG
|
| HYB39SC256 HYB39SC256800FF-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYI39S512400AT-7.5 HYB39S512400AT-7.5 HYB39S512160 |
512-Mbit Synchronous DRAM
|
Qimonda AG
|
| Q67100-Q1337 HB39S16A HYB39S16160AT-10 HYB39S16160 |
From old datasheet system
16 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
