| PART |
Description |
Maker |
| RA30H2127M RA30H2127M-01 RA30H2127M-E01 |
210-270MHz 30W 12.5V MOBILE RADIO 210 - 270MHz功率30W 12.5V移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TDA8954 |
2 X 210 W class-D power amplifier
|
NXP Semiconductors
|
| KAD5512P KAD5512P-12Q48 KAD5512P-12Q72 KAD5512P-17 |
Low Power 12-Bit, 250/210/170/125MSPS ADC
|
Intersil Corporation
|
| KAD5512P KAD5512P-12Q48 KAD5512P-12Q72 KAD5512P-17 |
Low Power 12-Bit, 250/210/170/125MSPS ADC
|
ETC
|
| HFA90NH40PBF |
HEXFRED? Ultrafast Soft Recovery Diode, 210 A
HEXFRED庐 Ultrafast Soft Recovery Diode, 210 A
HEXFRED㈢ Ultrafast Soft Recovery Diode, 210 A
|
Vishay Siliconix
|
| 44262-6412 |
5.33mm (.210") Pitch Crimp Terminal, Power Blade, Tin (Sn) Over Nickel (Ni), 14-16 AWG, Blade Length 13.08mm (.515")
5.33mm (.210) Pitch Crimp Terminal, Power Blade, Tin (Sn) Over Nickel (Ni), 14-16 AWG, Blade Length 13.08mm (.515)
|
Molex Electronics Ltd.
|
| P1817A-B P1817AF-08ST I1817A-08SR I1817BF-08TR P18 |
Input Frequency Range 6 MHz to 210 MHz
Low-Power Mobile VGA EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
| IRLU2703 IRLR2703 |
HEXFET Power MOSFET(210.97 k) HEXFET功率MOSFET10.97十一
HEXFET? Power MOSFET
|
Belden, Inc.
International Rectifier
|
| V54C3256404VDLF8PC V54C3256804VDLF8PC |
64M X 4 SYNCHRONOUS DRAM, 6 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
|
ProMOS Technologies, Inc.
|
| 2SK3424 2SK3424-ZK 2SK3424-ZJ |
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE 开关N沟道功率MOSFET的工业用
Power MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
