| PART |
Description |
Maker |
| IP2003NBSP IP2003 |
Fully optimized solution for high current synchronous buck multiphase applications in a LGA power block.
MULTIPHASE OPTIMIZED LGA POWER BLOCK
|
IRF[International Rectifier]
|
| PIC18F4580-I_ML PIC18F4580-I_P PIC18F4580-I_PT PIC |
28/40/44-Pin Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
|
Microchip Technology
|
| PIC18F4680 PIC18F2585 PIC18F2585_07 PIC18F2680 PIC |
Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
|
MICROCHIP[Microchip Technology]
|
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| IRFB4019 IRFB4019PBF |
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SMQ-C12 |
90o HYBRID SURFACE MOUNT OPTIMIZED BANDWIDTH 127.72 MHz
90ì HYBRID SURFACE MOUNT OPTIMIZED BANDWIDTH 127.72 MHz
|
http://
SYNERGY MICROWAVE CORPORATION
|
| ISL9N306AD ISL9N306AD3 ISL9N306AD3ST |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз 50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V 50A 6m
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| XC2C512 |
Optimized for 1.8V systems
|
Xilinx, Inc
|
| PIC18F4585-P PIC18F4585-I |
Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology
|
Microchip Technology
|
