| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
List of Unclassifed Manufacturers
|
| MJE702 MJE700 MJE701 MJE703 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP107 TIP105 TIP106 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP122 TIP121 TIP120 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| HI667A HI649A |
Emitter to base voltage:5V 1A PNP epitaxial planar transistor
|
Hi-Sincerity Microelectronics
|
| HJ3669 HJ3953 |
Emitter to base voltage:3V 200mA NPN epitaxial planar transistor
|
Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectroni...
|
| MJ10009-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| KGEA-BFCAM KGEA-BFCAM-B-0207-G KGEA-BFCAM-B-0207-J |
Emitter Antenna Low Profile 85x13x7mm Housing Plastic Base-Potted and Outside Connector unsealed&sealed
Emitter Antenna Low Profile 85x13x7mm Housing plastic base-potted and outside connector unsealed & sealed
|
PREMO CORPORATION S.L
|
