| PART |
Description |
Maker |
| STP270N8F7 STH270N8F7-6 STH270N8F7-2 |
N-channel 80 V, 2.1 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| STP95N3LLH6 |
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
|
ST Microelectronics
|
| STH110N10F7-2 STH110N10F7-6 |
High avalanche ruggedness
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL40N75LF3 |
N-channel 75 V, 16 mOhm typ., 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package
|
ST Microelectronics
|
| STH400N4F6-2 |
Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| STL7DN6LF3 |
Dual N-channel 60 V, 35 mOhm typ., 6.5 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 double island package
|
ST Microelectronics
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
| IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
| MC10XS3435BPNA MC10XS3435DPNA 10XS343509 MC10XS343 |
Quad High Side Switch (Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
|
