PART |
Description |
Maker |
STF6N65M2 STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
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ST Microelectronics
|
STF20N65M5 STFI20N65M5 |
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in TO-220FP package N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh(TM) V Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
STL34N65M5 |
N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV
|
ST Microelectronics
|
STF6N65K3045Y |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package
|
ST Microelectronics
|
STL31N65M5 |
N-channel 650 V, 0.135 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
STF31N65M5 STP31N65M5 STFI31N65M5 STB31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in I2PAKFP package N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in D2PAK package
|
STMicroelectronics ST Microelectronics
|
STFW69N65M5 STW69N65M5 |
N-channel 650 V, 0.037 Ohm, 58 A MDmesh(TM) V Power MOSFET in TO-3PF package N-channel 650 V, 0.037 Ω typ., 58 A MDmesh?V Power MOSFET in TO-3PF and TO-247 packages N-channel 650 V, 0.037 Ω typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages
|
ST Microelectronics STMicroelectronics
|
S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
STB8N65M5 STI8N65M5 STF8N65M5 |
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in D2PAK N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in I2PAK N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in TO-220FP
|
ST Microelectronics
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