| PART |
Description |
Maker |
| SMT06C SMT06C-05SADJJ SMT06C-12SADJJ |
5 Vin and 12 Vin single output
|
Emerson Network Power
|
| SIL05E SIL05E-05W3V3-VJ |
0.75 Vin to 3.63 Vin Single output
|
ARTESYN[Artesyn Technologies]
|
| TC1235EUNTR TC1236EUNTR TC1237EUNTR |
Inverting dual (Vin, Vin) charge pump voltage converters with shutdown, 12KHz
Inverting dual (Vin, Vin) charge pump voltage converters with shutdown, 35KHz
Inverting dual (Vin, Vin) charge pump voltage converters with shutdown, 125KHz
Inverting Dual (-VIN, -2VIN) Charge Pump Voltage Converters with Shutdown
|
Microchip
|
| SIL10E-05S0V8-VJ SIL10E-05S1V0-VJ SIL10E-05S1V8-VJ |
DC-DC / Non-Isolated
3.0 Vin - 5.5 Vin
|
Emerson Network Power
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| 5962-05238 5962-05240 5962-05241 5962-05242 5962-0 |
30W Total Output Power 28 Vin 1.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05238
30W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05240
30W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05241
30W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05242
30W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06241
30W Total Output Power 28 Vin 2.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package.
|
International Rectifier
|
| IS62LV1024 IS62LV1024LL IS62LV1024L IS62LV1024L-45 |
128K x 8 LOW POWER AND LOW Vcc 128K的8低功耗和低成本吓
128K*8 LOW POWER AND LOW Vcc CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
Samsung Semiconductor Co., Ltd.
Glenair, Inc.
N.A.
ICSI[Integrated Circuit Solution Inc]
|
| SIL30E-12W3V3-VJ |
12 Vin Single Output
|
Emerson Network Power
|
| SMT40C2-00SADJJ SIL40C2 SIL40C2-00SADJ-HJ SIL40C2- |
4.5-13.8 Vin Single C-Class Non-Isolated
|
Emerson Network Power
|
