| PART |
Description |
Maker |
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| M38C82MF-XXXFP M38C88EC-XXXFP M38C84EF-XXXFP M38C8 |
CON, RECEPTACLE F STR 16-PIN
CAP 4.7UF 50V 5% TANT SMD-7238-28 BULK B-MIL-PRF-55365/4
RES 75-OHM 1% 0.125W 200PPM THK-FILM SMD-1206 TR-7-PA
PTC Resettable Fuse; Operating Voltage Max:30V; Resistance:0.07ohm; Holding Current:1.85A; Tripping Current:3.7A; Initial Resistance Max:0.07ohm; Initial Resistance Min:0.04ohm; Interrupting Current Max:40A 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Replaced by TLV320AIC24K : Low-Power Stereo Voice Band CODEC 48-TQFP -40 to 85 单芯位CMOS微机
Low-Power Stereo CODEC with HP Amplifier 28-VQFN 0 to 70 单芯位CMOS微机
Replaced by TLV320AIC24K : Low-Power Stereo Voice Band CODEC 48-TQFP 0 to 70 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
http://
|
| STW200NF03 -STW200NF03 |
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET??II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFETII MOSFET N沟道30V 0.002欧姆- 120A条至247超低导通电阻MOSFET的第二STripFET
N-CHANNEL Power MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET?/a> II MOSFET
N-CHANNEL 30V - 0.002 OHM - 120A TO-247 ULTRA LOW ON-RESISTANCE STRIPFET II MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| IRFR3910TRR IRFR3910TRLPBF IRFRU3910 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
Ultra Low On-Resistance
|
International Rectifier
|
| 2SK3377 |
Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| 2SK1960 |
Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX
|
TY Semiconductor Co., L...
|
| 2SK3431 |
Super low on-state resistance: RDS(on)1 = 5.6m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
| 2SK3432 |
Super low on-state resistance: RDS(on)1 = 4.0m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
| 2205-H-RC 2202-V-RC 2218-H-RC 2215-V-RC 2208-H-RC |
Toroidal Inductor; Series:2200; Inductance:22uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:10.3A; DC Resistance Max:0.010ohm; Leaded Process Compatible:Yes 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:12uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:12A; DC Resistance Max:0.008ohm; Leaded Process Compatible:Yes 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:330uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:3.3A; DC Resistance Max:0.10ohm; Leaded Process Compatible:Yes 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:180uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:3.8A; DC Resistance Max:0.075ohm; Leaded Process Compatible:Yes 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:39uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:7.1A; DC Resistance Max:0.022ohm; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
High Current Toroid Inductors Horizontal or vertical mount Low cost
Toroidal Inductor; Series:2200; Inductance:68uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:4.9A; DC Resistance Max:0.046ohm; Leaded Process Compatible:Yes
Toroidal Inductor; Series:2200; Inductance:560uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:2.2A; DC Resistance Max:0.21ohm; Leaded Process Compatible:Yes
|
Bourns, Inc.
Bourns Electronic Solutions
BOURNS INC
Rohm
Bourns Electronic Solut...
|
| 2SK3434 |
Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS= 10 V, ID = 24A)
|
TY Semiconductor Co., L...
|
| 2SK3899 |
Low On-state resistance RDS(on)1 = 5.3m MAX.Low C iss: C iss = 5500 pF TYP.
N-Channel MOSFET
|
TY Semiconductor Co., L...
TY Semicondutor
|
