| PART |
Description |
Maker |
| LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT�
|
ON Semiconductor
|
| MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
| 2N7002TL-AN3-R 2N7002TG-AN3-R |
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MMBF0202PLT1 MMBF0202PL MMBF0202PLT1-D MMBF0202PLT |
Power MOSFET 300 mAmps, 20 Volts P-Channel SOT-23
|
ON Semiconductor
|
| MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| MMBF2201NT1G MMBF2201NT106 MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp.
Integrated Device Technology, Inc.
IRF[International Rectifier]
|
| MMBF0201NLT106 MMBF0201NLT1G MMBF0201NLT1 |
Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
|
ONSEMI[ON Semiconductor]
|
| BSS138LT1 BSS138LT1G BSS138LT3G BSS138LT3 BSS138L |
Power MOSFET 200 mAmps, 50 Volts
Power MOSFET 200 mA, 50 V
|
ONSEMI[ON Semiconductor]
|
| VN2222LL VN2222LLRLRM VN2222LLG VN2222LLRL VN2222L |
Small Signal MOSFET 150 mAmps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
