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EN3578A - Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

EN3578A_8230929.PDF Datasheet


Part No.	EN3578A 2SC4614S-AN 2SC4614T-AN 2SA1770S-AN
Description	Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP
File Size	608.45K / 7 Page
Maker	ON Semiconductor
Homepage	http://www.onsemi.com
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Full text search : Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

Product Description search : Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP

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2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| SPAK SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| SIP High-Voltage Switching Applications	SANYO[Sanyo Semicon Device]
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M391T2953BG0-CD5/CC M378T2953BG0-CD5/CC M378T3354B	TVS UNIDIRECT 1500W 16V SMC 无缓冲DDR2的内存模 TVS UNIDIRECT 1500W 160V SMC TVS UNI-DIR 160V 1500W SMC TVS BIDIRECT 1500W 160V SMC DDR2 Unbuffered SDRAM MODULE	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
ECG12 ECG25 ECG18 ECG19 ECG14 ECG31 ECG32 ECG26 EC	TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 5A I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1.2A I(C) \| TO-237 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 700MA I(C) \| SIP TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 700MA I(C) \| SIP TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1A I(C) \| TO-92VAR TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1A I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 50MA I(C) \| TO-92VAR TRANSISTOR \| BJT \| NPN \| 32V V(BR)CEO \| 2.5A I(C) \| SIP
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
CSB649AB	20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.	Continental Device India Limited
BUK98150-55	TrenchMOS transistor Logic level FET Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk	NXP Semiconductors PHILIPS[Philips Semiconductors]
BUK9514-55	Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 25x35 mm; Packaging: Bulk TrenchMOS transistor Logic level FET	PHILIPS[Philips Semiconductors] NXP Semiconductors

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