| PART |
Description |
Maker |
| IXFX52N60Q2 IXFK52N60Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
Advanced Technical Information
|
IXYS Corporation
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| AP2326GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| AP2311GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| IXFR26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS
|
IXYS Corporation
|
| IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC[ETC]
|
| IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| UB3010 |
N-Ch 30V Fast Switching MOSFETs
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IXFR100N25 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFR180N10NBSP IXFR180N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247
From old datasheet system
|
IXYS[IXYS Corporation]
|
| QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
