PART |
Description |
Maker |
AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
AP2328GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
AP2330GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
AP2306AGEN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
AP2321GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol HiPerFETTM Power MOSFETs MOSFET with FAST Intrinsic Diode Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
IXFH13N80Q IXFT13N80Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q Class From old datasheet system
|
IXYS[IXYS Corporation]
|
IXFR180N10NBSP IXFR180N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs ISOPLUS247 From old datasheet system
|
IXYS[IXYS Corporation]
|
IXFN80N48 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|