PART |
Description |
Maker |
DZT2907A-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V PNP SURFACE MOUNT TRANSISTOR
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Diodes Incorporated
|
ZXTP722MA ZXTP722MATA |
70V PNP LOW SATURATION TRANSISTOR Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes Incorporated
|
DXT2012P5 DXT2012P5-13 DXT2012P5-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V 60V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
FCX493A FCX493ATA FCX493ATC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
HBDM60V600W HBDM60V600W-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
FZT751Q |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
ZXTN25100BFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
ZUMT491 ZUMT491TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor Bipolar Transistor Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
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Bourns, Inc.
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